Fudan team develops ultra-fast flash memory integration technology: 20 nanosecond ultra-fast programming, 10-year non-volatile

On August 13, JinShi data reports that the previous research by the team of Zhou Peng-Liu Chunsen from Fudan University showed that the two-dimensional semiconductor structure can increase its speed by more than a thousand times, realizing a disruptive nanosecond-level ultra-fast storage flash memory technology. However, how to achieve scale integration and move towards real practical applications is still extremely challenging. At the same time, the research team has developed a self-alignment process that does not rely on advanced photolithography equipment, combined with the original innovative ultra-fast storage stack electric field design theory, and successfully achieved a super-fast flash memory device with a channel length of 8 nanometers, which is currently the shortest channel flash memory device internationally, and has broken through the physical size limit of silicon-based flash memory (about 15 nanometers). With the support of atomic-level thin-layer channels, this ultra-small device has 20 nanosecond ultra-fast programming, 10-year non-volatile, one hundred thousand cycles of life, and polymorphic storage performance. This work will promote the industrial application of ultra-fast disruptive flash memory technology.